NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor light emitting device is provided to improve light emitting efficiency by forming a diffusion preventing layer between a quantum well layer and at least one of barrier layers. An active layer(55) includes a quantum well layer(16), barrier layers(12) formed on and below the quantum well layer, and diffusion preventing layers(14) formed between the quantum well layer and the barrier layers to prevent diffusion of indium from the barrier layers. The quantum well layer has a first surface and a second surface which are opposite to each other. The active layer has a multi-quantum well structure including a desired number of structures each composed of the quantum well layer, the diffusion preventing layers and the barrier layer between the diffusion preventing layers.