| 摘要 |
A quartz product and a heat treatment apparatus are provided to suppress copper contamination of a semiconductor substrate by improving a profile of the copper contamination in a depth direction of the copper contamination through baking of the quartz product. A quartz product is placed in a reaction vessel(2) for receiving a substrate and performing heat treatment to the substrate. At least a portion of the quartz product is located in a heating atmosphere in the reaction vessel. After the quartz product to be subjected to heat treatment is placed in the reaction vessel, baking gases including a hydrogen chloride gas and a gas for enhancing reactivity of the hydrogen chloride gas are supplied into the reaction vessel, while heating the reaction vessel. Copper contaminated during the manufacturing process of the quartz product is removed through a baking process, for copper concentration in a region from a surface to 30 micrometers depth of the quartz product to be controlled below 20 ppb.
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