| 摘要 |
A method of forming a capacitor using amorphous carbon is provided to improve a property of a highly integrated capacitor by ensuring both an interval between isolation films and a bottom area. An insulating layer is formed on an etching stop layer, and then is partially etched by using a first amorphous carbon pattern to form a primary hole. A second amorphous carbon pattern is formed on a sidewall of the primary hole. The wet etching of insulating layer under the primary hall is performed to form a secondary hall, and then the remaining portion of the insulating layer under the secondary hall is etched to form a third hall exposing a surface of the etching stop layer. The first and second amorphous carbon patterns are removed. The wet etching of third hall is performed further to form a storage node hall, and then a storage node is formed in the storage node hall.
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