METHOD FOR FABRICATING VERTICAL-TYPE LIGHT EMITTING DIODE

摘要

A method of manufacturing a vertical light emitting diode is provided to remarkably increase a separation speed of a sapphire substrate by generating an acoustic stress wave between the substrate and a GaN-based layer. A sapphire substrate is separated from GaN-based layers after a conductive support layer is formed. The separation process of the substrate from GaN-based layers is carried out by attaching a vacuum chuck onto the substrate and the conductive support layer and then generating an acoustic stress wave between the sapphire substrate and the GaN-based layers. A contact layer(600) is formed on the GaN-based layers which are physically separated from by the conductive support layer filling a trench. The contact layer has an interface layer(610) directly contacting the GaN-based layers, and a contact pad(620) formed on the interface layer.