| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to select various temperature ranges of a heat process by performing only a process for manufacturing a metal line layer. A first substrate(100) includes a transistor layer(110) on which a transistor is formed. A second substrate(200) includes metal line layers(210,220,230,240,250,260) on which metal lines are formed. A connection electrode electrically connects the transistor formed on the first substrate to the metal line formed on the second substrate. The first substrate includes the transistor layer formed on a semiconductor substrate(205) and a metal line layer(120) formed on the transistor layer. The first substrate includes a contact plug connected to the transistor. The second substrate includes metal line layers and a through electrode(207). The through electrode is connected to the metal line and passes through the semiconductor substrate. |
