METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to simplify a process for fabricating a semiconductor by forming a photoresist layer instead of a multi-functional hard mask layer on a layer to be etched wherein the photoresist layer has high Si content. A photoresist composition is prepared which includes a silicon compound in which a silicon molecule content in the entire polymer weight is not less than 30 weight percent. An organic ARC is formed on a layer(21) to be etched. After the photoresist composition is deposited on the layer to be etched, a photolithography process is performed to form a photoresist pattern(23-1). The layer to be etched is patterned by using the photoresist pattern as an etch mask to form an etch layer pattern.