Method of fabricating polycrystalline silicon thin-film transistor,申请号KR20050128913-传众专利搜索

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发明名称	Method of fabricating polycrystalline silicon thin-film transistor
摘要
申请公布号	KR100788993(B1)	申请公布日期	2007.12.28
申请号	KR20050128913	申请日期	2005.12.23
申请人		发明人
分类号	H01L29/786	主分类号	H01L29/786
代理机构		代理人
主权项
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