| 摘要 |
PROBLEM TO BE SOLVED: To provide a method that has higher compatibility with standard CMOS processes or bipolar processes. SOLUTION: A pressure sensor is produced by joining a first wafer 1a having CMOS circuitry 2 and a second wafer 14 that is an SOI wafer. A recess is formed in the top material layer of the first wafer 1a. The recess is covered with a silicon layer 17 of the second wafer 14 to form a cavity 18. A substrate 15 of the second wafer 14 is partially or entirely removed, and a film is formed from the silicon layer 17. Alternatively, the cavity can be formed in the second wafer 14. The second wafer 14 is electrically connected to the circuitry on the first wafer 1a. This method allows standard CMOS processes for integrating circuitry on the first wafer 1a to be used. COPYRIGHT: (C)2008,JPO&INPIT |
