Production of silicon porous particles for the application of active substances, comprises doping an area of a silicon wafer, producing recesses in the silicon wafer, porosifying of the silicon wafer, and removing of the porous particles

摘要

The production of silicon porous particles for the application of active substances, comprises doping an area (2) of a p-doped silicon wafer (1), producing recesses (3) in the silicon wafer, porosifying of the silicon wafer, functionalizing of the porous particles, and removing of the porous particles by mechanical effect. An area enclosed by the recesses forms the lateral dimensions of the porous particle. The area that is near to a surface is doped with a layer thickness of 500 nm to 5 mu m. Stabilizing elements are present in the structure of recesses. The production of silicon porous particles for the application of active substances, comprises doping an area (2) of a p-doped silicon wafer (1), producing recesses (3) in the silicon wafer, porosifying of the silicon wafer, functionalizing of the porous particles, and removing of the porous particles by mechanical effect. An area enclosed by the recesses forms the lateral dimensions of the porous particle. The area that is near to a surface is doped with a layer thickness of 500 nm to 5 mu m. Stabilizing elements are present in the structure of recesses. Below the doped area forming the porous particle, an area with higher porosity or area with local electro polishing is formed opposite to the doped area. Non-porosified area is formed below the porous particle formed in the doped area. An independent claim is included for silicon porous particles.