| 摘要 |
FIELD: manufacture of linear and matrix radiation detectors. ^ SUBSTANCE: proposed method for producing photodetectors on indium antimonide includes formation of p-n junction on substrate, anodic oxidation to form insulating film, application of passivating dielectric film, and formation of contact system. Surface areas of substrate free from local p-n junction are doped before oxidation by diffusion or ionic implantation including post-implantation annealing to dope concentration of 5.1017-1019 cm-3. In the process distance of 5-50 mum is left between doping region boundary closest to p-n junction and the latter. Passivating film is applied so that distance of minimum 10 mum is left between this film and doping region boundary farthest from p-n junction. ^ EFFECT: enhanced yield of structures on passivating film exfoliation perimeter which reduces percentage of rejected photodiode strips. ^ 2 cl, 3 dwg, 1 tbl |
