| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor self-standing substrate with which the variation in wavelength or output power of emission light, element life or the like can be reduced and the yield of a light-emitting device can be enhanced when the substrate is used for forming a light-emitting device structure; and to provide a nitride semiconductor light-emitting element using the substrate. <P>SOLUTION: The nitride semiconductor self-standing substrate is composed of a nitride-based compound semiconductor crystal in which the variation of the lattice constant is ±12 ppm or less. The nitride-based compound semiconductor is expressed by formula: Al<SB>x</SB>In<SB>y</SB>Ga<SB>1-x-y</SB>N(where, 0≤x+y≤1). Then, the nitride semiconductor light-emitting element is formed by using the nitride semiconductor self-standing substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
