| 摘要 |
PROBLEM TO BE SOLVED: To form easily a cone-form contact hole. SOLUTION: A contact-hole forming method has a process for forming a metal film 12 on a semiconductor substrate 11, a process for forming an SiO<SB>2</SB>film 13 on the metal film 12, a process for forming a first resist film 14 on the SiO<SB>2</SB>film 13, a process for forming a second resist film 15 on the resist film 14, a process for forming in the resist film 15 an opening 16 for the formation of a contact hole, a process for so using an exposure light source which sensitizes only the resist film 14 as to form in the resist film 14 an opening 17 larger than the opening 16, and a process for so using etching gases CF<SB>4</SB>, C<SB>2</SB>F<SB>6</SB>, etc. while using resist films 14, 15 as masks and so performing a reactive ion etching as to remove selectively the SiO<SB>2</SB>film 13 and as to form a contact hole 19. COPYRIGHT: (C)2008,JPO&INPIT
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