| 摘要 |
PROBLEM TO BE SOLVED: To contrive the increase of effect of strain application technique which contrives the improvement of performance of a transistor, in a fully depleted silicon-on-insulator (FDSOI) transistor having thin buried oxide (BOX) film. SOLUTION: In the FDSOI transistor having an extremely thin SOI structure 6, a stress generating region is provided on the rear side 5 of the extremely thin BOX layer 4 to impress strain on a channel forming part. The strain generating region is formed by a method wherein a desired region on the rear side of the BOX is amorphously effected by implanting ions and, thereafter, heat treatment recrystallization is effected in a condition that the strain applied film 3 is formed to transfer a strain from the strain applied film 3 to the channel forming part. COPYRIGHT: (C)2008,JPO&INPIT
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