| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid imaging device having an enlarged dynamic range as compared with prior art. SOLUTION: The solid imaging device comprises a photoelectric conversion element 30, an impurity region 20 for storing charges contiguous to the photoelectric conversion element 30, a gate insulating film 21 located above the impurity region 20, a gate electrode 22 located above the gate insulating film 21, first and second impurity regions 40 and 50 for overflow contiguous to the photoelectric conversion element 30, a well 12 contiguous to the impurity region 20 and the second impurity region 50 for overflow, respectively, two impurity regions 17a and 17b at least one of which is formed in the well 12 to become a source or a drain, a heavily doped region 15 formed on the well 12 and located between the impurity regions 17a and 17b, a gate insulating film 13 located above the heavily doped region 15, and a gate electrode 14 located above the gate insulating film 13. COPYRIGHT: (C)2008,JPO&INPIT
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