ION BEAM RADIATOR AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a device capable of effectively suppressing divergence of ion beam caused by spatial charges by efficiently neutralizing the spatial charges of ion beam using a field-emission electron source. SOLUTION: The ion beam radiator is equipped with a field-emission electron source 10 which is provided near the path of ion beam 2 to emit electrons 12. The field-emission electron source 10 is so arranged that the incident angle of the electron 12 formed from the direction parallel to the advancing direction of the ion beam 2 and emitted from it is in the range of -15°to +45°(inward direction of ion beam 2 as positive and outward one as negative). COPYRIGHT: (C)2008,JPO&INPIT