| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile variable resistance memory device including Cu<SB>2</SB>O. SOLUTION: The nonvolatile variable resistance memory device including Cu<SB>2</SB>O may include a lower electrode 20, a first Cu compound layer 22 disposed on the lower electrode 20, a second Cu compound layer 24 disposed on the first Cu compound layer 22, and an upper electrode 26 disposed on the second Cu compound layer 24. The first Cu compound layer 22 may be formed to contain Cu<SB>2</SB>O. The second Cu compound layer 24 may be composed of a mixture containing Cu and substance of group 16. Each of the upper electrode 26 and the lower electrode 20 is composed of Pt, Ru, Ir, Au, Ag or Ti. COPYRIGHT: (C)2008,JPO&INPIT
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