发明名称 |
Capacitor and Method of Manufacturing a Capacitor |
摘要 |
In a method of fabricating a semiconductor device, a level of metal is formed within an interval dielectric. The level of metal includes a first metal line separated from a second metal line by a region of the interlevel dielectric. The region of interlevel dielectric is removed between the first metal line and the second metal line. A high-k dielectric is formed between the first metal line and the second metal line in the region where the interlevel dielectric was removed such that a capacitor is formed by the first metal line, the second metal line and the high-k dielectric.
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申请公布号 |
US2007294871(A1) |
申请公布日期 |
2007.12.27 |
申请号 |
US20070851969 |
申请日期 |
2007.09.07 |
申请人 |
FELSNER PETRA;SCHAFBAUER THOMAS;KERST UWE;BARTH HANS-JOACHIM;KALTALIOGLU ERDEM |
发明人 |
FELSNER PETRA;SCHAFBAUER THOMAS;KERST UWE;BARTH HANS-JOACHIM;KALTALIOGLU ERDEM |
分类号 |
H01G9/004;H01G4/06;H01G4/228;H01G4/33;H01G4/40;H01L21/768;H01L21/77;H01L21/8242;H01L27/02;H01L27/108 |
主分类号 |
H01G9/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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