| 摘要 |
A semiconductor device includes an organic semiconductor transistor provided on a substrate; a data line connected to a source electrode or a drain electrode of the organic semiconductor transistor; and a gate line that is disposed so as to intersect the data line and that is connected to a gate electrode of the organic semiconductor transistor. In the semiconductor device, the gate line includes the gate electrode, a first gate line that transmits signals to the gate electrode, and a second gate line intersecting the data line, with an interlayer insulation layer therebetween; the gate electrode, the first gate line, and the second gate line are connected in series; and the electric conductivity of the first gate line is higher than the electric conductivity of the gate electrode and the electric conductivity of the second gate line.
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