发明名称 |
METHOD FOR OPERATING NON-VOLATILE MEMORY USING TEMPERATURE COMPENSATION OF VOLTAGES OF UNSELECTED WORD LINES AND SELECT GATES |
摘要 |
Reading and verify operations are performed on non-volatile storage elements using temperature-compensated read voltages for unselected word lines, and/or for select gates such as drain or source side select gates of a NAND string. In one approach, while a read or verify voltage is applied to a selected word line, temperature-compensated read voltages are applied to unselected word lines and select gates. Word lines which directly neighbor the selected word line can receive a voltage which is not temperature compensated, or which is temperature-compensated to a reduced degree. The read or verify voltage applied to the selected word line can also be temperature-compensated. The temperature compensation may also account for word line position. |
申请公布号 |
WO2007149676(A2) |
申请公布日期 |
2007.12.27 |
申请号 |
WO2007US69709 |
申请日期 |
2007.05.25 |
申请人 |
SANDISK CORPORATION;MOKHLESI, NIMA;ZHAO, DENGTAO |
发明人 |
MOKHLESI, NIMA;ZHAO, DENGTAO |
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