发明名称 Non volatile multi-bit memory unit for use in multi-bit flash memory system of e.g. mobile terminal, has cache memory with random access memory and electrically coupled with page buffer that comprises set of buffers
摘要 <p>The memory unit (105) has a memory cell array (110) with a set of memory cells, and a page buffer (120) electrically coupled with the memory cell array. The page buffer comprises a set of buffers (125) for storing a bit from multi-bit data that is written to or read from the set of memory cells. A cache memory with a random access memory is electrically coupled with the page buffer. The cache memory stores another bit of multi-bit data, which is written to and read from the memory cells. Independent claims are also included for the following: (1) a system comprising a non volatile multi-bit memory unit (2) a method for programming a non volatile multi-bit memory unit.</p>
申请公布号 DE102007023533(A1) 申请公布日期 2007.12.27
申请号 DE20071023533 申请日期 2007.05.18
申请人 SAMSUNG ELECTRONICS CO. LTD. 发明人 LEE, HO-KIL;LEE, JIN-YUB
分类号 G11C11/56;G11C16/06 主分类号 G11C11/56
代理机构 代理人
主权项
地址