发明名称 |
Non volatile multi-bit memory unit for use in multi-bit flash memory system of e.g. mobile terminal, has cache memory with random access memory and electrically coupled with page buffer that comprises set of buffers |
摘要 |
<p>The memory unit (105) has a memory cell array (110) with a set of memory cells, and a page buffer (120) electrically coupled with the memory cell array. The page buffer comprises a set of buffers (125) for storing a bit from multi-bit data that is written to or read from the set of memory cells. A cache memory with a random access memory is electrically coupled with the page buffer. The cache memory stores another bit of multi-bit data, which is written to and read from the memory cells. Independent claims are also included for the following: (1) a system comprising a non volatile multi-bit memory unit (2) a method for programming a non volatile multi-bit memory unit.</p> |
申请公布号 |
DE102007023533(A1) |
申请公布日期 |
2007.12.27 |
申请号 |
DE20071023533 |
申请日期 |
2007.05.18 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
LEE, HO-KIL;LEE, JIN-YUB |
分类号 |
G11C11/56;G11C16/06 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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