TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM
摘要
A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are heated when the treating compound is introduced. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing.
申请公布号
WO2007040816(A3)
申请公布日期
2007.12.27
申请号
WO2006US30848
申请日期
2006.08.08
申请人
TOKYO ELECTRON LIMITED;LEE, ERIC, M.;TOMA, DOREL, I.