发明名称 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM
摘要 A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are heated when the treating compound is introduced. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing.
申请公布号 WO2007040816(A3) 申请公布日期 2007.12.27
申请号 WO2006US30848 申请日期 2006.08.08
申请人 TOKYO ELECTRON LIMITED;LEE, ERIC, M.;TOMA, DOREL, I. 发明人 LEE, ERIC, M.;TOMA, DOREL, I.
分类号 H01L21/31;H01L21/20;H01L21/469 主分类号 H01L21/31
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