| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of working of a via hole by which a metal contaminant stuck to the inside surface of the via hole can be removed. <P>SOLUTION: This method is a method of working the via hole for forming the via hole which reaches a bonding pad by applying a pulse laser beam from the side of the rear of a substrate to a wafer on the surface of the substrate of which a plurality of devices are formed and also the bonding pad is formed on the device and which includes the via hole forming stage where the via hole which reaches the bonding pad is formed by applying the pulse laser beam from the rear side of the substrate and a cleaning stage where the metal contaminant stuck to the inner peripheral surface of the via hole in the via hole forming stage is removed by applying the pulse laser beam, the spot diameter of which is set to 0.2-0.3D when taking the diameter of the via hole desired to be formed as D and which is set to 3-20 J/cm<SP>2</SP>in the energy density per one pulse, to the inner peripheral surface of the via hole formed on the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
