| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film solar cell having a band structure ideal for improving the energy conversion efficiency. <P>SOLUTION: The thin-film solar cell 10 is provided with light absorbing layers 13a, 13b each made of a chalcopyrite structure semiconductor. The light-absorbing layers 13a, 13b include a first semiconductor layer 13a, made of CIGS and a second semiconductor layer 13b made of CIAS. In the first semiconductor layer 13a, a band gap becomes smaller, the closer it comes to the second semiconductor layer 13b. The second semiconductor layer 13b has a band gap larger than the smallest band gap in the first semiconductor layer 13a. A double grated band gap is formed of the first and second semiconductor layers 13a, 13b. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
