| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent deterioration of a write-in property of a nonvolatile semiconductor memory. <P>SOLUTION: The nonvolatile semiconductor memory 1 is provided with a plurality of memory cells 2 of an electric field effect transistor type, a source bias control circuit 10, and a drain bias control circuit 20. The source bias control circuit 10 sets a potential VCS of a source line 3 connected commonly to sources of a plurality of memory cells 2 variably during write-in operation. The drain bias control circuit 20 sets a potential VD of a drain source of a plurality of memory cells 2 variably in accordance with the potential VCS of the source line 3. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
