发明名称 |
Transfer method for forming a silicon-on-plastic wafer |
摘要 |
A method of fabricating a silicon-on-plastic layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; depositing a layer of silicon; implanting splitting hydrogen ions into the silicon substrate; bonding a glass substrate to the silicon layer; splitting the wafer; removing the silicon layer and a portion of the SiGe layer; depositing a dielectric on the silicon side of the silicon-on-glass wafer; applying adhesive and bonding a plastic substrate to the silicon side of the silicon-on-glass wafer; removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer; and completing a desired IC device on the silicon-on-plastic. Multi-level structure may be fabricated according to the method of the invention by repeating the last few steps of the method of the invention.
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申请公布号 |
US2007298588(A1) |
申请公布日期 |
2007.12.27 |
申请号 |
US20070891502 |
申请日期 |
2007.08.10 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;LEE JONG-JAN;TWEET DOUGLAS J.;HSU SHENG T. |
分类号 |
H01L21/301 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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