发明名称 |
Semiconductor integrated circuit device having deposited layer for gate insulation |
摘要 |
A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second element forming region of the main surface of the semiconductor substrate and made thinner than the gate insulating film of the first field effect transistor. The method comprises the steps of forming a thermally oxidized film over a first element forming region and a second element forming region of the main surface of the semiconductor substrate; forming a deposited film over the main surface of the semiconductor substrate including said thermally oxidized film; removing the deposited film and said thermally oxidized film from over the second element forming region; and forming a thermally oxidized film over the second element forming region to form a gate insulating film individually over the first element forming region and the second element forming region. |
申请公布号 |
US2007296030(A1) |
申请公布日期 |
2007.12.27 |
申请号 |
US20070848992 |
申请日期 |
2007.08.31 |
申请人 |
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发明人 |
SHUKURI SHOJI;SUZUKI NORIO;TANIGUCHI YASUHIRO |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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