| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a MOS image sensor IC that suppresses variations in the photoelectric conversion characteristics between respective pixels, and has uniform photoelectric conversion characteristics over the entire IC. <P>SOLUTION: A plurality of pixel regions are surrounded by conductive materials for fixing potential, where all conductive materials are fixed to the same potential. The conductive materials for fixing potential, which are formed in a narrow shape, are arranged inside and are connected electrically so that all of the conductive materials become the same potential as a silicon substrate, thus fixing the potential of a region that becomes a foundation when a protective film is formed over the entire pixel region, uniformizing the thickness of the protective film and film quality, and hence eliminating variations in the photoelectric conversion characteristics between the pixels. <P>COPYRIGHT: (C)2008,JPO&INPIT |
