| 摘要 |
An exposure mask of a semiconductor device comprises a substrate. Recesses are etched on a surface of the substrate to change a refractive index of an incident light. The changed refractive index causes a diffraction angle of the incident light to increase or decrease. As a result of the change in the diffraction angle, ultra fine patterns for highly integrated semiconductor devices may be formed without being adversely impacted by a proximity effect.
|
