| 摘要 |
<p>The invention is intended for metrology of semiconductor materials for optoelectronics, in particularly, for determination of stimulated emission threshold of semiconductor layers and structures under optical pumping. It can be used for characterization of semiconductor crystals and structures, designed for manufacturing of semiconductor lasers. A method for determination of stimulated emission threshold of semiconductors uses for optical pumping two coherent beams which induce spatially modulated free carrier pattern in a semiconductor, monitor the diffraction efficiency of the modulated structure by optical probe pulse, measure the diffraction efficiency of the probe beam at various pumping beam energies, and determine the stimulated emission threshold of a semiconductor as the optical pumping energy, at which the saturation of diffraction efficiency takes place. Another variation of the method is based on measurement of the decay kinetics of probe beam diffraction efficiency at various pumping be</p> |
