| 摘要 |
Example embodiments provide a semiconductor memory device and method of forming a semiconductor memory device that may equalize load due to a coupling capacitance between a line and a component signal when the line intersects the component signal in a memory cell array. A line may intersect a memory cell region between a transmitting point (A) and a receiving point (B) of a signal. A line between the transmitting point (A) and the receiving point (B) may be bent at two portions of each of bit lines. Because areas where the line and the bit lines extend parallel to each other may be equal in dimension at each bit line, coupling capacitances between the line and the bit lines may be equalized. The read characteristic may not be affected by the coupling capacitances. |
