| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which prevents peeling of a semiconductor layer (a second semiconductor layer) in an upper part of an SOI structure. SOLUTION: An SiGe layer 13 is formed on an Si substrate 1, and a supporter hole to expose the Si substrate 1 is formed by selectively etching the SiGe layer 13. Then, an Si layer 31 is formed on the SiGe layer 13 and in at least an inner wall of the supporter hole, and a supporter 41 supporting the Si layer 31 is formed inside the supporter hole 21. Thereafter, the Si layer 31 and the SiGe layer 13 are selectively etched one by one, and a groove 43 exposing a side surface of the SiGe layer 13 is formed. A hollow part is formed between the Si substrate 1 and the Si layer 31 by etching the SiGe layer 13 via the groove 43 by wet etching using nitrohydrofluoric acid. Thereafter, an SiO<SB>2</SB>film 53 is formed inside the hollow part. According to such a constitution, it is possible to protect the side surface 54 of the SiO<SB>2</SB>film 53 formed inside the hollow part from etchant. COPYRIGHT: (C)2008,JPO&INPIT
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