| 发明名称 |
Memory cell programmed using a temperature controlled set pulse |
| 摘要 |
A memory device includes a phase change memory cell and a circuit. The circuit is for programming the memory cell to a selected one of more than two states by applying a temperature controlled set pulse to the memory cell.
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| 申请公布号 |
US2007297221(A1) |
申请公布日期 |
2007.12.27 |
| 申请号 |
US20060455340 |
申请日期 |
2006.06.19 |
| 申请人 |
PHILIPP JAN BORIS;HAPP THOMAS |
发明人 |
PHILIPP JAN BORIS;HAPP THOMAS |
| 分类号 |
G11C11/34;G11C5/14;G11C7/04;G11C11/00 |
主分类号 |
G11C11/34 |
| 代理机构 |
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代理人 |
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