SEMICONDUCTOR DEVICE

摘要

In a phase change memory, an interfacial layer is inserted between a calcogenide material layer and a plug. Covering of the whole interface of plug electrode by the interfacial layer is avoided. Formation of the plug above the calcogenide layer realizes an integration increase. The interfacial layer is produced by sputtering with the use of either an oxide target or a metal target to thereby form a metal film and thereafter oxidizing the metal film in an oxidative atmosphere of oxygen radical, oxygen plasma, etc.