| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with no contamination, damage, and disturbance in a fine particle layer, provided with a fine particles layer structure including a separated fine particle layer. SOLUTION: A semiconductor device has (A) a wall-like two layer structure formed on a substrate 11, with a side wall of a lower layer 31 composed of a separation region 30 having an undercut shape with respect to the side wall of an upper layer 32, and (B) an active element formed on a part of the substrate 11 surrounded by the separation region 30. The active element includes fine particles 22 composed of a conductor or a semiconductor and a conductive route 21 formed of an organic semiconductor molecule bonded to the fine particles 22, and the fine particle layer 20 composed of the fine particles 22 is separated at the side wall of the separation region 30. COPYRIGHT: (C)2008,JPO&INPIT
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