| 摘要 |
The invention is directed to a photomask for a photolithography process. The photomask comprises a substrate, at least one image region and a plurality of alignment marks. The image regions are located on the substrate and at least an image center of one of the image regions non-overlap with a substrate center. The alignment marks are located on the substrate and surrounding each of the image regions. Each of the image regions is surrounded by at least four alignment marks.
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