| 发明名称 |
OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING N-FACE OR M-PLANE GAN SUBSTRATE PREPARED WITH AMMONOTHERMAL GROWTH |
| 摘要 |
A method for growing D3-V nitride films having an N-face or M-plane using an ammonothepnal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane 3Gallium Nitride films and bulk GaN. |
| 申请公布号 |
WO2007149487(A2) |
申请公布日期 |
2007.12.27 |
| 申请号 |
WO2007US14383 |
申请日期 |
2007.06.20 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY;HASHIMOTO, TADAO;SATO, HITOSHI;NAKAMURA, SHUJI |
发明人 |
HASHIMOTO, TADAO;SATO, HITOSHI;NAKAMURA, SHUJI |
| 分类号 |
C30B23/06;H01L29/04;H01L33/16 |
主分类号 |
C30B23/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
