| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a dielectric memory device which secures the effective area of the greatest capacitor decided by the size of a diffusion prevention film, and also hardly causes the exfoliation of the diffusion prevention film during heat treatment. <P>SOLUTION: The dielectric memory device includes a first interlayer dielectric 17 formed on a semiconductor substrate 11, and a dielectric capacitor 25. The dielectric capacitor 25 covers the surface of the wall of an opening formed in a diffusion prevention film 19 for preventing the diffusion of oxygen formed on the first interlayer dielectric, and in a second interlayer dielectric 20 formed on the first interlayer dielectric 17; and also comprises a first conductive film 21 formed so as to cover the side surface of the diffusion prevention film 19, a dielectric film 23 formed so as to cover the upper surface of the diffusion prevention film 19 and so as to cover the side surface of the first conductive film 21, and a second conductive film 24 formed so as to cover the dielectric film 23. <P>COPYRIGHT: (C)2008,JPO&INPIT |
