| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of effectively suppressing a penetration of a dark current into a charge storage part and a charge-transfer part by satisfying both of a maintenace of the number of saturated electrons and the optimization of a transfer efficiency, and to provide its manufacturing method. <P>SOLUTION: The direction of the tangential surface to a silicon crystal axis of a semiconductor substrate 10 of the solid-state imaging device 1 is mutually different about an STI layer 113a in a periphery of the charge storage part 110 and an STI layer 113b in a periphery of the charge transfer part 115. This entails that the concentrations of p-type semiconductors in defect restraining layers 116a, 116b are mutually different in the peripehry of the charge storage part 110 and in the periphery of the charge transfer part. <P>COPYRIGHT: (C)2008,JPO&INPIT |
