| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent a semiconductor element for large power from being dipped in a high temperature molten PPS resin during formation thereof. <P>SOLUTION: In the insulated semiconductor device for large power, a lead frame 1 having a placement 1a to place the semiconductor element 3 for large power is made by insert molding of the PPS resin. In the insulated semiconductor device for large power, the lead frame 1 is formed with a tie bar 1e1 extended from the front side face 1a2 of the placement 1a to the front side face 2b side of the PPS resin molding 2, a tie bar 1e2 extended from a rear side face 1a3 of the placement 1a to the rear side face 2c side of the PPS resin molding 2, and tie bars 1e3 and 1e4 extended from a left side face 1a4 of the placement 1a to the left side face 2d side of the PPS resin molding 2. The top face 1a1 of the placement 1a is arranged above the top face 2a of the PPS resin molding 2, and the thickness of the placement 1a is made larger than that of the tie bars 1e1, 1e2, 1e3, and 1e4. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
