METHOD FOR PRODUCING ALUMINUM NITRIDE-CONTAINING MATERIAL, ALUMINUM NITRIDE-CONTAINING MATERIAL AND RADIATOR OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride-containing material producible at a lower production cost comparing with heretofore. SOLUTION: The production method comprises the processes for: arranging aluminum pieces 21 on boron nitride powders or particles 20; generating an aluminum nitride-containing material by heating the boron nitride 20 and aluminum piece 21 at a temperature of 900 to 1,300°C in a nitrogen atmosphere of 5-30 atm to melt the aluminum piece (a first heat treatment process); cooling the resultant material; and increasing the content of aluminum nitride in the above material by re-heating the material at the temperature of 900 to 1,300°C in the nitrogen atmosphere of 5-30 atm. COPYRIGHT: (C)2008,JPO&INPIT