| 摘要 |
A method for manufacturing a semiconductor device, includes: partially forming an epitaxial growth stopper film on a single crystal semiconductor substrate; sequentially depositing a first semiconductor layer and a second semiconductor layer on the semiconductor substrate by an epitaxial growth process; forming a first groove penetrating through the second semiconductor layer and the first semiconductor layer on the semiconductor substrate, at a region inside from an outer peripheral portion of the epitaxial growth stopper film, by partially etching the second semiconductor layer and the first semiconductor layer; forming a support body film on an entire surface of the semiconductor substrate, so as to fill the first groove and cover the second semiconductor layer; forming a support body in a shape covering the second semiconductor layer from the first groove to an element region extending over the outer peripheral portion of the epitaxial growth stopper film, by partially etching the support body film; forming a second groove exposing a side surface of the first semiconductor layer, by sequentially etching the second semiconductor layer and the first semiconductor layer exposing from under the support body; forming a hollow portion between the semiconductor substrate and the second semiconductor layer, by selectively etching the first semiconductor layer interposing the second groove therebetween, under an etching condition that the first semiconductor layer is easier to etch than the second semiconductor layer; and forming an insulating layer in the hollow portion.
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