| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging apparatus and its driving method restraining a dark current to photoelectrons overflowing from a photodiode, in a solid state imaging apparatus with a large dynamic range. SOLUTION: The solid state imaging apparatus includes a plurality of pixels integrated in an array shape on a semiconductor. Each pixel comprises a photodiode (C<SB>PD</SB>), a transfer transistor (ϕ<SB>T</SB>), a floating diffusion (C<SB>FD</SB>), a storage capacity element (C<SB>S</SB>), a storage transistor (ϕ<SB>S</SB>), and a reset transistor. To at least one gate electrode of the transfer transistor, storage transistor, and reset transistor; there is applied voltage exceeding voltage applied to a semiconductor substrate as off level voltage of the transistor or voltage (α) at -0.6 V or lower, with respect to the voltage applied to the semiconductor substrate through a storage period of photoelectric charges. COPYRIGHT: (C)2008,JPO&INPIT
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