| 摘要 |
PROBLEM TO BE SOLVED: To provide a division method of a nitride semiconductor wafer capable of suppressing dispersion in the length of a semiconductor element and obtaining improved element characteristics. SOLUTION: The division method of the nitride semiconductor wafer 100 comprises a process of forming a cleavage introduction groove 100B for obtaining a nitride semiconductor element 1 to a wafer peripheral section 100A of the nitride semiconductor wafer 100, where a nitride semiconductor layer 3 is laminated on a nitride semiconductor substrate 2; and a process of cleaving the nitride semiconductor wafer 100 along the cleavage introducing groove 100B. In the division method, when forming the cleavage introduction groove 100B, the wafer center side of a cleavage introducing groove formation region in the nitride semiconductor wafer 100 is set to be a scribe start position (m), the wafer periphery section side is set to be a scribe-end position (n), and scribing machining is made from the scribe-start position (m) to the scribing-end position (n). COPYRIGHT: (C)2008,JPO&INPIT |
