| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for integrating nonlinear elements containing graphene, and to improve degree of integration of a semiconductor. SOLUTION: The graphene integrated circuit has nonlinear elements, containing graphene formed on a silicon surface of a silicon carbide substrate. Its manufacturing method comprises a step of preparing the silicon carbide substrate, having the silicon surface covered with an insulation film; a step of removing the insulating film on a plurality of desired portions, to expose the silicon surface; a step of heating the substrate to form graphene on the exposed portions; a step of forming ohmic electrodes on the graphene, or a step of heating the substrate, having the silicon surface to form graphene on the silicon surface; a step of isolating the graphene; a step of forming an insulation film on the trenches formed by the isolation; and a step of forming ohmic electrodes on the graphene. COPYRIGHT: (C)2008,JPO&INPIT |
