发明名称 |
FILM DEPOSITION METHOD, FILM DEPOSITION APPARATUS, AND STORAGE MEDIUM |
摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus excellent in step coverage, and capable of consistently feeding a raw material and practically depositing a metal film of excellent quality without degrading the raw material. SOLUTION: The film deposition method comprises a step of generating a carboxylate gas by reacting a carboxylic acid with an oxygen-containing metal compound, a step of depositing a carboxylate film 2 by feeding the carboxylate gas on a substrate 1, and a step of decomposing the carboxylate film 2 and depositing a metal film 3 by supplying the energy to the substrate 1 with the carboxylate film 2 deposited thereon. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2007332453(A) |
申请公布日期 |
2007.12.27 |
申请号 |
JP20070043910 |
申请日期 |
2007.02.23 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
MIYOSHI SHUSUKE;GUNJI ISAO;ITO HITOSHI |
分类号 |
C23C16/16;C23C16/448;C23C16/455;C23C16/46;H01L21/285 |
主分类号 |
C23C16/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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