发明名称 FILM DEPOSITION METHOD, FILM DEPOSITION APPARATUS, AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus excellent in step coverage, and capable of consistently feeding a raw material and practically depositing a metal film of excellent quality without degrading the raw material. SOLUTION: The film deposition method comprises a step of generating a carboxylate gas by reacting a carboxylic acid with an oxygen-containing metal compound, a step of depositing a carboxylate film 2 by feeding the carboxylate gas on a substrate 1, and a step of decomposing the carboxylate film 2 and depositing a metal film 3 by supplying the energy to the substrate 1 with the carboxylate film 2 deposited thereon. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007332453(A) 申请公布日期 2007.12.27
申请号 JP20070043910 申请日期 2007.02.23
申请人 TOKYO ELECTRON LTD 发明人 MIYOSHI SHUSUKE;GUNJI ISAO;ITO HITOSHI
分类号 C23C16/16;C23C16/448;C23C16/455;C23C16/46;H01L21/285 主分类号 C23C16/16
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