| 发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
<p>A semiconductor device is provided with a substrate; an insulating film, which is formed on the substrate and is composed of a fluorine added carbon film; a copper wiring embedded in the insulating film; and a barrier film formed between the insulating film and the copper wiring. The barrier film is provided with a first film composed of titanium, for suppressing diffusion of the fluorine; and a second film composed of tantalum between the first film and the copper wiring, for suppressing diffusion of the copper.</p> |
| 申请公布号 |
WO2007148535(A1) |
申请公布日期 |
2007.12.27 |
| 申请号 |
WO2007JP61450 |
申请日期 |
2007.06.06 |
| 申请人 |
TOKYO ELECTRON LIMITED;HORIGOME, MASAHIRO |
发明人 |
HORIGOME, MASAHIRO |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/522 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
