SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device is provided with a supporting substrate; a first device section bonded on the supporting substrate; and a second device section formed on the supporting substrate. The first device section has an SOI structure, which is composed of an insulating layer and a semiconductor layer which is laminated on the insulating layer and includes a low-concentration active region and a high-concentration active region. In the first device section, a first conductor layer facing the low-concentration active region and a second conductor layer facing at least a part of the high-concentration active region are formed. The second device section is electrically connected to the second conductor layer.