| 摘要 |
A precursor of zirconium dioxide is provided to improve thermal stability and volatility of the compound, thereby depositing high quality of zirconium dioxide thin film through the metal-organic chemical vapor deposition(MOCVD) or atomic layer deposition(ALD) method. A precursor of zirconium dioxide for deposition of zirconium dioxide thin film is represented by the formula(1), wherein A is NR^2R^3 or ER^4; E is oxygen or sulfur; R^1 is hydrogen, methyl or ethyl; R^2 and R^3 are each independently C1-C4 alkyl group optionally having a fluor group or SiR^5_3; R^4 is C1-C6 alkyl group optionally having a fluor group or SiR^5_3; and R^5 is C1-C4 alkyl group. The precursor of zirconium dioxide represented by the formula(1) is prepared by reacting a zirconium compound represented by the formula(2) with alkali metal salt of amide, alkali metal salt of alkoxide or alkali metal salt of thiolate represented by the formula(3): MA, wherein M is lithium, sodium or potassium and X is chlorine, bromine or iodine atom.
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