| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the defect of a gate insulating film or the defect of the semiconductor substrate located near a gate electrode is removed, and to provide its manufacturing method. SOLUTION: The manufacturing method of the semiconductor device comprises: a process for removing a part of conductive film, and exposing a gate insulating film 41 by etching the conductive film formed via the gate insulating film 41 on the main surface of a semiconductor substrate 10; a process for removing the whole portion exposed by etching in the gate insulating film 41; a process for forming an insulating film 60 on the side wall of an assist gate electrode AG on the semiconductor substrate 10 after removing the whole exposed portion of the gate insulation film 41; a process for forming the gate insulating film 42 on the main surface of the semiconductor substrate 10 located in a region sandwiched by the sidewall insulating films 60; a process for forming a conductive film FG0 on a gate insulating film 42; and a process for forming a floating gate electrode by patterning the conductive film FG0. COPYRIGHT: (C)2008,JPO&INPIT
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