| 摘要 |
PROBLEM TO BE SOLVED: To form a constitution in which a transistor for a switch and the transistor for a power amplifier are integrated in one chip, and each has characteristics required for each. SOLUTION: A semiconductor integrated circuit device comprises the transistor 2 for the switch by a junction-gate field-effect transistor constitution and the transistor 3 for the power amplifier by a metamorphic hetero-junction bipolar transistor constitution. Consequently, these transistors are formed on the same substrate 1; and can be realized as an integrated module with a low on resistance, high breakdown strength, low-loss switch, and the power amplifier having a high-speed operation and a high-current gain. COPYRIGHT: (C)2008,JPO&INPIT
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